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EIC discrete Semiconductors - ULTRA FAST RECOVERY RECTIFIER DIODES

Numéro de référence RG2
Description ULTRA FAST RECOVERY RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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RG2 fiche technique
RG2 - RG2Z
PRV : 200 - 400 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
ULTRA FAST RECOVERY
RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current Ta = 60 °C
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine wave, Single Shot)
Maximum Forward Voltage at IF = 1.5A
Maximum Reverse Current at VR = VRM Ta = 25 °C
Maximum Reverse Current at VR = VRM Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRM
VRSM
IF(AV)
IFSM
VF
IR
IR(H)
Trr
TJ
TSTG
RG2Z
RG2
200 400
200 400
1.2
50
1.5
0.5
2.5
100
- 40 to + 150
- 40 to + 150
UNITS
Volts
Volts
Amps.
Amps.
Volts
mA
mA
ns
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
UPDATE : APRIL 23, 1998

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