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PDF RFP50N05 Data sheet ( Hoja de datos )

Número de pieza RFP50N05
Descripción 50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! RFP50N05 Hoja de datos, Descripción, Manual

Data Sheet
50A, 50V, 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET’S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05
TO-247
RFG50N05
RFP50N05
TO-220AB
RFP50N05
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
RFG50N05, RFP50N05
July 1999 File Number 2873.3
Features
• 50A, 50V
• rDS(ON) = 0.022
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




RFP50N05 pdf
Test Circuits and Waveforms
RFG50N05, RFP50N05
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 14. SWITCHING TIME TEST CIRCUIT
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
4-466
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
VDS
Qg(TOT)
VGS
VGS = 2V
0
Ig(REF)
0
Qg(10)
Qg(TH)
VGS = 10V
VGS = 20V
FIGURE 17. GATE CHARGE WAVEFORMS

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