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Número de pieza | RFP12N10L | |
Descripción | 12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFP12N10L (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Data Sheet
RFP12N10L
July 1999 File Number 1512.3
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12N10L
TO-220AB
F12N10L
NOTE: When ordering, include the entire part number.
Features
• 12A, 100V
• rDS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
Packaging
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
6-224
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page RFP12N10L
Test Circuits and Waveforms (Continued)
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 12. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
IG(REF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 13. GATE CHARGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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ASIA
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
6-228
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RFP12N10L.PDF ] |
Número de pieza | Descripción | Fabricantes |
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RFP12N10 | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
RFP12N10L | N-Channel Logic Level Power MOSFET | Fairchild Semiconductor |
RFP12N10L | 12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
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