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Numéro de référence | RFP10N15 | ||
Description | 10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETs | ||
Fabricant | Intersil Corporation | ||
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1 Page
Data Sheet
RFP10N15
March 1999 File Number 1445.3
10A, 150V, 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10N15
TO-220AB
RFP10N15
NOTE: When ordering, include the entire part number.
Features
• 10A, 150V
• rDS(ON) = 0.300Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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Pages | Pages 5 | ||
Télécharger | [ RFP10N15 ] |
No | Description détaillée | Fabricant |
RFP10N12 | (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State |
RFP10N12 | (RFP10N12 / RFP10N15) N-Channel Power MOSFET | Harris Semiconductor |
RFP10N12 | Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
RFP10N12L | (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET | Harris Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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