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Número de pieza | RFL1N15 | |
Descripción | 1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFL1N15 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Semiconductor
January 1998
Features
• 1A, 120V and 150V
• rDS(ON) = 1.9Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N12
TO-205AF
RFL1N12
RFL1N15
TO-205AF
RFL1N15
NOTE: When ordering, use the entire part number.
RFL1N12,
RFL1N15
1A, 120V and 150V, 1.9 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09196.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1444.2
1 page RFL1N12, RFL1N15
Test Circuits and Waveforms
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 12. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
tD(ON)
tR
90%
tOFF
tD(OFF)
tF
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 13. RESISTIVE SWITCHING WAVEFORMS
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RFL1N15.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs | Intersil Corporation |
RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | New Jersey Semiconductor |
RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | New Jersey Semiconductor |
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