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RFL1N10L fiches techniques PDF

Intersil Corporation - 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET

Numéro de référence RFL1N10L
Description 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RFL1N10L fiche technique
RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel
Power MOSFET
Features
• 1A, 100V
• rDS(ON) = 1.200
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N10L
TO-205AF
RFL1N10L
NOTE: When ordering, use the entire part number.
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor specifically designed for use with logic
level (5V) driving sources in applications such as program-
mable controllers, automotive switching, and solenoid driv-
ers. This performance is accomplished through a special
gate oxide design which provides full rated conduction at
gate biases in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic circuit supply volt-
ages.
Formerly developmental type TA09524.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 1510.3

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