PDF RFG60P05E Data sheet ( Hoja de datos )

Número de pieza	RFG60P05E
Descripción	60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
Fabricantes	Fairchild Semiconductor
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No Preview Available ! www.DataSheet4U.com Data Sheet January 2002 RFG60P05E 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits. Formerly developmental type TA09835. Ordering Information PART NUMBER PACKAGE BRAND RFG60P05E TO-247 RFG60P05E NOTE: When ordering, use the entire part number. Features • 60A, 50V • rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G Packaging DataSheet4U.com JEDEC STYLE TO-247 S DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE DataShee DataSheet4U.com ©2002 Fairchild Semiconductor Corporation DataSheet4 U .com DataSheet4U.com RFG60P05E Rev. B 1 page www.DataSheet4U.com RFG60P05E Typical Performance Curves Unless Otherwise Speciﬁed (Continued) 8000 6000 4000 2000 0 0 CISS COSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS CRSS -5 -10 -15 -20 VDS, DRAIN TO SOURCE VOLTAGE (V) -25 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE -50 -10 -37.5 -25 -12.5 VDD = BVDSS VDD = BVDSS RL = 0.83Ω IG(REF) = 4mA VGS = -10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS -7.5 -5 -2.5 00 20I-I-G-G-----((--AR-----CE----FT----)-) t, TIME (µs) 80 I-I-G-G-----((--AR-----CE----FT----)-) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms et4U.com VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VGS tP RG VDS L0 DataSheet4U.com - VDD + DUT VDD IAS 0.01Ω tAV IAS tP BVDSS VDS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS DataShee VGS VGS RGS VDS RL DUT - VDD + FIGURE 16. SWITCHING TIME TEST CIRCUIT DataSheet4U.com ©2002 Fairchild Semiconductor Corporation DataSheet4 U .com tON td(ON) tr 0 10% tOFF td(OFF) tf 10% VDS VGS 0 90% 10% 50% PULSE WIDTH 90% 50% 90% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS DataSheet4U.com RFG60P05E Rev. B 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
RFG60P05E	60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET	Fairchild Semiconductor
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