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PDF RFG50N06 Data sheet ( Hoja de datos )
| Número de pieza | RFG50N06 | |
| Descripción | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet
July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RFG50N06, RFP50N06, RF1S50N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
4000
3000
2000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
1000
0
0
COSS
CRSS
5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60
VDD = BVDSS
45
VDD = BVDSS
10
7.5
30 5.0
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
15 0.25 BVDSS 0.25 BVDSS 2.5
RL = 1.2Ω
Ig(REF) = 1.45mA
VGS = 10V
0
Ig(REF)
20
Ig(ACT)
t, TIME (µs)
Ig(REF)
80
Ig(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-471
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. SWITCHING WAVEFORMS
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RFG50N06.PDF ] | |
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