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RFG50N05 fiches techniques PDF

Intersil Corporation - 50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs

Numéro de référence RFG50N05
Description 50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RFG50N05 fiche technique
Data Sheet
50A, 50V, 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET’S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05
TO-247
RFG50N05
RFP50N05
TO-220AB
RFP50N05
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
RFG50N05, RFP50N05
July 1999 File Number 2873.3
Features
• 50A, 50V
• rDS(ON) = 0.022
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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