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RFG40N10 fiches techniques PDF

Fairchild Semiconductor - 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

Numéro de référence RFG40N10
Description 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RFG40N10 fiche technique
Data Sheet
RFG40N10, RFP40N10, RF1S40N10,
RF1S40N10SM
January 2002
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10
TO-247
RFG40N10
RFP40N10
TO-220AB
RFP40N10
RF1S40N10
TO-262AA
F1S40N10
RF1S40N10SM
TO-263AB
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
Packaging
DRAIN
(FLANGE)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 40A, 100V
• rDS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C

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