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RFF70N06 fiches techniques PDF

Intersil Corporation - 25A/ 60V/ 0.025 Ohm/ N-Channel Power MOSFET

Numéro de référence RFF70N06
Description 25A/ 60V/ 0.025 Ohm/ N-Channel Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RFF70N06 fiche technique
Data Sheet
RFF70N06
March 1999 File Number 4073.2
25A, 60V, 0.025 Ohm, N-Channel Power
MOSFET
The RFF70N06 N-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFF70N06
TO-254AA
RFF70N06
NOTE: When ordering, use the entire part number.
Commercial Version: RFG70N06.
Features
• 25A, 60V
• rDS(ON) = 0.025
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
Current is limited by the package capability.
Symbol
D
G
S
Packaging
JEDEC TO-254AA
PACKAGE TAB
(ISOLATED)
GATE
SOURCE
DRAIN
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
4-442
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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