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Datasheet RFD8P05-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


RFD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RFD10Diode (spec sheet)

American Microsemiconductor
American Microsemiconductor		diode
2RFD10P03LP-Channel Power MOSFET

SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve �
Harris
Harris		mosfet
3RFD10P03L10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET

RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim
Intersil Corporation
Intersil Corporation		mosfet
4RFD10P03LSMP-Channel Power MOSFET

SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve �
Harris
Harris		mosfet
5RFD10P03LSM10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET

RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim
Intersil Corporation
Intersil Corporation		mosfet
6RFD12N06RLE17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE Features JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
7RFD12N06RLE12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of
Intersil Corporation
Intersil Corporation		mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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