RFD4N06LSM Datasheet PDF - Fairchild Semiconductor
| Part Number | RFD4N06LSM | |
| Description | 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and RFD4N06LSM download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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Data Sheet
RFD4N06L, RFD4N06LSM
June 1999 File Number 2837.1
4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD4N06L
TO-251AA
RFD4N06L
RFD4N06LSM
TO-252AA
RFD4N06LSM
NOTE: When ordering, use the entire part number.
Features
• 4A, 60V
• rDS(ON) = 0.600Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
• SOA is Power Dissipation Limited
• 175oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
6-189
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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RFD4N06L, RFD4N06LSM
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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ASIA
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
6-193
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Featured Datasheets
| Part Number | Description | MFRS |
| RFD4N06LSM | The function is 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs. Fairchild Semiconductor | |
| RFD4N06LSM | The function is 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs. Intersil Corporation |  |
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