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RFD3055SM fiches techniques PDF

Fairchild Semiconductor - 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs

Numéro de référence RFD3055SM
Description 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RFD3055SM fiche technique
Data Sheet
RFD3055, RFD3055SM, RFP3055
January 2002
12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3055
TO-251AA
FD3055
RFD3055SM
TO-252AA
FD3055
RFP3055
TO-220AB
FP3055
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 12A, 60V
• rDS(ON) = 0.150
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev. B

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