PDF RFD16N06SM Data sheet ( Hoja de datos )

Número de pieza	RFD16N06SM
Descripción	16A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFET
Fabricantes	Intersil Corporation
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No Preview Available ! Semiconductor September 1998 RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET [ /Title (RFD16 N06, RFD16 N06SM) /Sub- ject (16A, 60V, 0.047 Ohm, N-Chan- nel Power MOS- FET) /Author () /Key- words (Harris Semi- conduc- tor, N- Chan- nel Power MOS- FET, TO- 251AA, TO- 252AA) /Cre- Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti- mum utilization of silicon, resulting in outstanding perfor- mance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Symbol DRAIN PART NUMBER PACKAGE BRAND RFD16N06 TO-251AA F16N06 RFD16N06SM TO-252AA F16N06 NOTE: When ordering, use the entire part number. Add sufﬁx 9A to ob- tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A. GATE SOURCE Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 4087.1 1 page RFD16N06, RFD16N06SM Typical Performance Curves (Continued) 1600 1200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 60 VDD = BVDSS 45 VDD = BVDSS 10 7.5 CISS 800 400 0 0 COSS CRSS 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 30 5.0 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 15 2.5 RL = 3.75Ω IG(REF) = 0.8mA VGS = 10V 00 20 I-I-G-G----((--AR----CE----FT----)) t, TIME (µs) 80 I-I-G-G----((--AR----CE----FT----)) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VARY tP TO OBTAIN REQUIRED PEAK IAS VGS tP 0V RG VDS L DUT + VDD - IAS 0.01Ω 0 tP IAS BVDSS VDS VDD tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VGS VDS VGS RGS RL DUT + VDD - FIGURE 16. SWITCHING TIME TEST CIRCUIT VDS tON td(ON) tr 90% tOFF td(OFF) tf 90% 10% 0 10% VGS 10% 0 50% PULSE WIDTH 90% 50% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 5-5 5 Page

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