DataSheetWiki


RFD16N05L fiches techniques PDF

Intersil Corporation - 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs

Numéro de référence RFD16N05L
Description 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





1 Page

No Preview Available !





RFD16N05L fiche technique
Data Sheet
RFD16N05L, RFD16N05LSM
April 1999 File Number 2269.2
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N05L
TO-251AA
RFD16N05L
RFD16N05LSM
TO-252AA
RFD16N05LSM
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 16A, 50V
• rDS(ON) = 0.047
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
6-163
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

PagesPages 6
Télécharger [ RFD16N05L ]


Fiche technique recommandé

No Description détaillée Fabricant
RFD16N05 16A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
RFD16N05 16A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFD16N05 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFD16N05L 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche