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Datasheet RFD16N05-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
RFD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RFD10 | Diode (spec sheet) American Microsemiconductor diode | | |
2 | RFD10P03L | P-Channel Power MOSFET SEMICONDUCTOR May 1997
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Features
Description
• 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve � Harris mosfet | | |
3 | RFD10P03L | 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
3515.2
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim Intersil Corporation mosfet | | |
4 | RFD10P03LSM | P-Channel Power MOSFET SEMICONDUCTOR May 1997
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Features
Description
• 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve � Harris mosfet | | |
5 | RFD10P03LSM | 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
3515.2
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim Intersil Corporation mosfet | | |
6 | RFD12N06RLE | 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Data Sheet January 2002
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE
Features
JEDEC TO-252AA
DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10 Fairchild Semiconductor mosfet | | |
7 | RFD12N06RLE | 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Data Sheet July 1999 File Number 2407.4
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs
These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of Intersil Corporation mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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