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RFD14N05L fiches techniques PDF

Intersil Corporation - 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

Numéro de référence RFD14N05L
Description 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RFD14N05L fiche technique
RFD14N05L, RFD14N05LSM, RFP14N05L
Data Sheet
April 1999 File Number 2246.3
14A, 50V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N05L
TO-251AA
14N05L
RFD14N05LSM
TO-252AA
14N05L
RFP14N05L
TO-220AB
FP14N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
Features
• 14A, 50V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE™ Model
• Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-135
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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