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PDF RF3108PCBA Data sheet ( Hoja de datos )
| Número de pieza | RF3108PCBA | |
| Descripción | TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE | |
| Fabricantes | RF Micro Devices | |
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RF3108
2 TRIPLE-BAND GSM/DCS/PCS
POWER AMP MODULE
Typical Applications
• 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• GPRS Compatible
2
Product Description
The RF3108 is a high-power, high-efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is self-contained with 50Ω input
and output terminals. The device is manufactured on an
advanced GaAs HBT process, and has been designed for
use as the final RF amplifier in GSM/DCS and PCS hand
held-digital cellular equipment and other applications in
the 880MHz to 915MHz and 1710MHz to 1910MHz
bands. On-board power control provides over 70dB of
control range with an analog voltage input, and provides
power down with a logic "low" for standby operation. The
device is packaged in an ultra-small (9mmx10mm) LCC,
minimizing the required board space.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC 1
PCS IN 2
PCS VAPC 3
GND 4
GSM VAPC 5
GSM IN 6
VCC 7
14 PCS OUT
13 GND
12 GND
11 VCC
10 GND
9 GND
8 GSM OUT
1.40
1.40
1.40
1.40
1.40
1.40
1.30
0.30
0.60
typ.
9.0 + 0.10
Note orientation of Pin 1.
NOTE: Shaded area represents Pin 1.
10.0 + 0.10
1.00
typ.
0.90
typ.
0.38
Ref.
1.55
+ 0.10
Package Style: Module
Features
• Single 2.9V to 4.7V Supply Voltage
• +35.5dBm GSM Output Pwr at 3.5V
• +33.0dBm DCS/PCS Output Pwr at 3.5V
• 55% GSM and 50% DCS/PCS Efficiency
• Supports GSM, E-GSM and DCS/PCS
• 9mmx10mm Package Size
Ordering Information
RF3108
Triple-Band GSM/DCS/PCS Power Amp Module
RF3108 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 010702
2-261
1 page  
RF3108
Theory of Operation and Application Information
The RF3108 is a triple-band, GSM/DCS/PCS power
amplifier with two separate RF inputs and outputs that
are internally matched to 50Ω. Pins 2 and 14 of the
device provide the RF input and output for the DCS/
PCS band, which is optimized for performance
between 1710MHz and 1910MHz. Pins 5 and 8 of the
device provide the RF input and output for the GSM
band, which is optimized for performance between
880MHz and 915MHz. Both bands include an internal
DC-blocking capacitor to protect the device from exter-
nal DC source inputs and block internal DC from exit-
ing the inputs and outputs of the module. The
performance is similar to the performance of the
RF2173 and RF2174 MIMIC devices used in dual- or
triple-band applications. However, the RF3108 module
includes the matching and bypass capacitors required
for operation internal to the 9mmx10mm module.
However, some external components are required to
improve stability, isolation and noise power perfor-
mance. These components are included on the evalua-
tion board and schematic, and will be described in the
following paragraphs.
The GSM 900MHz band provides 32dB and the DCS/
PCS 1710MHz to 1910MHz band provides 28dB of
small signal gain at full output power. Therefore, the
drive level required to fully saturate the output is
+4dBm for each band. Based upon HBT (Heterojunc-
tion Bipolar Transistor) technology, the part requires
only a single positive 3V supply to operate to full spec-
ification. The DCS/PCS band input is located at pin 2
of the device and requires no external components.
The GSM 900MHz band input is located at pin 6 of the
device and also does not require external components.
However, a 180Ω resistor is included at the input of the
GSM band to improve the input impedance and isola-
tion performance at low VAPC levels. The output for
both high and low bands are internally matched to 50Ω
at the output of pin 14 and 8. A 50Ω microstrip should
be used to interface to the input and output connec-
tions.
Power control for the GSM 900MHz band is provided
through pin 5 of the device, and pin 3 for the DCS/PCS
band. The VAPC inputs do not contain any internal
bypass capacitors and will require some external filter-
ing. Because the VAPC filtering capacitor is external to
the device, the user has the option of choosing a
capacitor value that meets the control loop BW and fil-
tering requirement for various applications. In most typ-
ical applications with a closed loop power control, the
recommended bypass capacitor for this input is
approximately 33pF for the GSM band, and 12pF for
the DCS/PCS band. However in open loop operation, a
10nF VAPC bypass capacitor is recommended for both
bands to filter noise from the external VAPC source. A
10nF capacitor is installed on pins 3 and 5 on the cur-
rent evaluation board (see the evaluation board sche-
matic). Noise on the VAPC input will degrade the noise
power performance of the device, so care should be
used to provide a clean VAPC input signal. This is espe-
cially important when measuring noise power or stabil-
ity performance.
The voltage supply VCC contains internal bypass
capacitors and inductors to filter unwanted noise on
the DC supply voltage. However, the main VCC input to
the device at pin 11 requires some additional bypass
capacitors as shown in the evaluation board sche-
matic. C5 (1uF) and C4 (3.3uF) are required to
improve the stability performance.
All the internal ground connections are connected to a
series of ground pads located on the backside of the
package as shown in the pin out diagram. Pins 4, 9,
10, 12, and 13 are also ground connections. The final
stages of both bands are connected to the ground
pads on the backside of the package. Therefore this
ground connection is essential to dissipate heat and to
provide proper current flow. Refer to the evaluation
board layout as an example of the vias locations and
quantity required for proper connection.
2
Rev A3 010702
2-265
5 Page | ||
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