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Número de pieza | RF2312PCBA | |
Descripción | LINEAR GENERAL PURPOSE AMPLIFIER | |
Fabricantes | RF Micro Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF2312PCBA (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! RF2312
3 LINEAR GENERAL PURPOSE AMPLIFIER
Typical Applications
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
Product Description
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
GND 2
GND 3
GND 4
8 RF OUT
7 GND
6 GND
5 GND
Functional Block Diagram
0.160
0.152
0.018
0.014
-A-
0.010
0.004
0.200
0.192
0.050
0.248
0.232
0.059
0.057
8° MAX
0° MIN
0.0100
0.0076
0.0500
0.0164
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Package Style: SOIC-8
Features
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
• +20dBm Output Power
• Single 5V to 12V Positive Power Supply
Ordering Information
RF2312
RF2312 PCBA
RF2312 PCBA
Linear General Purpose Amplifier
Fully Assembled Evaluation Board - 75Ω
Fully Assembled Evaluation Board - 50Ω
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
3
Rev C2 010813
3-1
1 page RF2312
Pin
1
2
3
4
5
6
7
8
Function
RF IN
GND
GND
GND
GND
GND
GND
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC-
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1kΩ
resistor to ground on this pin reduces the bias level, which may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC-cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. Each ground pin should
have a via to the ground plane.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output and bias pin. Because DC is present on this pin, a DC-block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor RC is 30Ω (0.5W) for VCC=9V and
21Ω for VCC=8V. The DC voltage on this pin is typically 6.0V with a
current of 100mA. In lower power applications the value of RC can be
increased to lower the current and VD on this pin.
RF IN
RF OUT
3
Rev C2 010813
3-5
5 Page Evaluation Board Layout - 75Ω
Standard Voltage
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
RF2312
3
Rev C2 010813
3-11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet RF2312PCBA.PDF ] |
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