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Numéro de référence | RN4987FE | ||
Description | TOSHIBA Transistor Silicon NPNPNP Epitaxial Type | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN4987FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
RN4987FE
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
CC
R1
B
R1
B
E
R1: 10 kW
R2: 47 kW
(Q1, Q2 common)
Marking
E
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit (top view)
654
6 H Q1 Q2
123
1 2002-01-16
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Pages | Pages 4 | ||
Télécharger | [ RN4987FE ] |
No | Description détaillée | Fabricant |
RN4987FE | TOSHIBA Transistor Silicon NPNPNP Epitaxial Type | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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