DataSheetWiki


RN4987FE fiches techniques PDF

Toshiba Semiconductor - TOSHIBA Transistor Silicon NPNPNP Epitaxial Type

Numéro de référence RN4987FE
Description TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





RN4987FE fiche technique
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN4987FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
RN4987FE
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
CC
R1
B
R1
B
E
R1: 10 kW
R2: 47 kW
(Q1, Q2 common)
Marking
E
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
Equivalent Circuit (top view)
654
6 H Q1 Q2
123
1 2002-01-16

PagesPages 4
Télécharger [ RN4987FE ]


Fiche technique recommandé

No Description détaillée Fabricant
RN4987FE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche