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Numéro de référence | RN2909FE | ||
Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
RN2907FE~RN2909FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FE,RN2908FE,RN2909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1907FE~RN1909FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2907FE
RN2908FE
RN2909FE
R1 (kW)
10
22
47
R2 (kW)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FE~
RN2909FE
RN2907FE
Emitter-base voltage
RN2908FE
RN2909FE
Collector current
Collector power dissipation RN2907FE~
Junction temperature
RN2909FE
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC (Note)
Tj
Tstg
Rating
-50
-50
-6
-7
-15
-100
100
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Total rating
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2003-01-10
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Pages | Pages 4 | ||
Télécharger | [ RN2909FE ] |
No | Description détaillée | Fabricant |
RN2909FE | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | Toshiba Semiconductor |
RN2909FS | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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