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RN2709 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN2709
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN2709 fiche technique
RN2707~RN2709
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2707,RN2708,RN2709
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in USV (ultra super mini type with 5 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1707~RN1709
Equivalent Circuit and Bias Resistor Values
Type No.
RN2707
RN2708
RN2709
R1 (k)
10
22
47
R2 (k)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
2-2L1A
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2707~2709
RN2707
RN2708
RN2709
RN2707~2709
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
6
7
15
100
200
150
55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07

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