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Numéro de référence | RN2701JE | ||
Description | Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1701JE~RN1706JE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2701JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN2706JE
R1 (kW)
4.7
10
22
47
2.2
4.7
R2 (kW)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
RN2701JE~RN2706JE
RN2701JE~RN2704JE
RN2705JE, RN2706JE
Collector power dissipation
Junction temperature
Storage temperature range
RN2701JE~RN2706JE
VCBO
VCEO
VEBO
-50
-50
-10
-5
IC
PC
(Note)
-100
100
Tj 150
Tstg -55~150
Note: Total rating
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
54
Q1 Q2
123
1 2002-01-24
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Pages | Pages 4 | ||
Télécharger | [ RN2701JE ] |
No | Description détaillée | Fabricant |
RN2701JE | Switching/ Inverter Circuit/ Interface Circuit and Driver Circuit Applications | Toshiba Semiconductor |
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