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Toshiba Semiconductor - TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Numéro de référence RN2210
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN2210 fiche technique
RN2210,RN2211
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1210, 1211
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
JEDEC
EIAJ
TOSHIBA
Unit Weight: 0.13g
50
50
5
100
300
150
55~150
V
V
V
mA
mW
°C
°C
2-4E1A
1 2001-06-07

PagesPages 5
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