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RN2005 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN2005
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN2005 fiche technique
RN2001~RN2006
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2001,RN2002,RN2003
RN2004,RN2005,RN2006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1001~RN1006
Equivalent Circuit and Bias Resister Values
Type No.
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
R1 (k)
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2001~2006
RN2001~2004
RN2005, 2006
RN2001~2006
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
400
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
Unit
V
V
V
mA
mW
°C
°C
TO-92
SC-43
2-5F1B
1 2001-06-07

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