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RN1910 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN1910
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1910 fiche technique
RN1910,RN1911
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1910,RN1911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2910, RN2911
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC*
Jj
Tstg
Rating
50
50
5
100
200
150
55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
1 2001-06-07

PagesPages 5
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