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RN1909 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

شماره قطعه RN1909
شرح مفصل TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
تولید کننده Toshiba Semiconductor 
آرم Toshiba Semiconductor 


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RN1909 شرح
RN1907~RN1909
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN1907
RN1908
RN1909
10
22
47
R2 (k)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1907~1909
RN1907
RN1908
RN1909
RN1907~1909
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
6
7
15
100
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07

قانون اساسیصفحه 6
دانلود [ RN1909 دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
RN1907 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Toshiba Semiconductor
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RN1908 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Toshiba Semiconductor
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RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Toshiba Semiconductor
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