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RN1603 fiches techniques PDF

Toshiba Semiconductor - Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications

Numéro de référence RN1603
Description Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1603 fiche technique
RN1601~RN1606
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1601,RN1602,RN1603
RN1604,RN1605,RN1606
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2601~RN2606
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN1601
RN1602
RN1603
RN1604
RN1605
RN1606
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
RN1601~1606
RN1601~1604
RN1605, 1606
RN1601~1606
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
10
5
100
300
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07

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