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Numéro de référence | RN1444 | ||
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
RN1441~RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
l High emitter-base voltage: VEBO = 25V (min)
l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)
l Low on resistance: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Unit in mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Marking
Rating
50
20
25
300
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Type No.
RN1441
RN1442
RN1443
RN1444
HFE classification
AB
KA KB
LA LB
NA NB
CA CB
1 2001-06-07
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Pages | Pages 9 | ||
Télécharger | [ RN1444 ] |
No | Description détaillée | Fabricant |
RN1441 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1442 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1443 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN1444 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
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