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Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Numéro de référence RN1442
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1442 fiche technique
RN1441~RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
l High emitter-base voltage: VEBO = 25V (min)
l High reverse hFE: reverse hFE = 150 (typ.) (VCE = 2V, IC = 4mA)
l Low on resistance: RON = 1(typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Unit in mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Marking
Rating
50
20
25
300
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
Type No.
RN1441
RN1442
RN1443
RN1444
HFE classification
AB
KA KB
LA LB
NA NB
CA CB
1 2001-06-07

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