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Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Numéro de référence RN1241
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN1241 fiche technique
RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
Unit: mm
l High emitter-base voltage
: VEBO = 25v (min)
l High reverse hfe
: reverse hFE = 150 (typ.) (VCE = 2V, IC = 4ma)
l Low on resistance
: RON = 1(typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Rating
50
20
25
300
300
150
55~150
Unit
V
V
V
mA
mW
°C
°C
2-4E1A
1 2001-06-07

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