(PDF) RN1204 Datasheet - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Número de pieza	RN1204
Descripción	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2201~2206 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 4.7 10 22 47 2.2 4.7 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1201~1206 RN1201~1204 RN1205, 1206 RN1201~1206 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.13g Unit V V V mA mW °C °C ― ― 2-4E1A 1 2001-06-07 1 page RN1201~RN1206 5 2001-06-07 5 Page

Páginas	Total 6 Páginas
PDF Descargar	[ Datasheet RN1204.PDF ]

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PDF RN1204 Data sheet ( Hoja de datos )