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Numéro de référence | RN1116 | ||
Description | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2114~2118
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114
RN1115
RN1116
RN1117
RN1118
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114~1118
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114~1118
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
5
6
7
15
25
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
―
―
2-2H1A
1 2001-06-07
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Pages | Pages 8 | ||
Télécharger | [ RN1116 ] |
No | Description détaillée | Fabricant |
RN1111 | BUSSED RESISTOR NETWORK | California Micro Devices Corp |
RN1112F | Silicon NPN Epitaxial Type Transistor | Toshiba |
RN1113F | Silicon NPN Epitaxial Type Transistor | Toshiba |
RN1114 | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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