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PDF RMPA0965 Data sheet ( Hoja de datos )
| Número de pieza | RMPA0965 | |
| Descripción | CDMA and CDMA2000-1X PowerEdge Power Amplifier Module | |
| Fabricantes | Fairchild Semiconductor | |
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September 2004
RMPA0965
CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module
General Description
The RMPA0965 power amplifier module (PAM) is designed
for cellular band AMPS, CDMA and CDMA2000-1X
applications. The 2 stage PAM is internally matched to 50Ω
to minimize the use of external components and features a
low-power mode to reduce standby current and DC power
consumption during peak phone usage. High power-added
efficiency and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) process.
Features
• Single positive-supply operation with low power and
shutdown modes
• 40% CDMA efficiency at +28 dBm average output power
• 52% AMPS mode efficiency at +31 dBm output power
• Compact LCC package ( 3.0 x 3.0 x 1.0 mm)
• Internally matched to 50Ω and DC blocked RF input/
output
• Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings1
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
TSTG
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Parameter
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
INPUT
MATCH
Vmode 3
DC BIAS CONTROL
Vref 4
8 Vcc2
OUTPUT
MATCH
7 RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2004 Fairchild Semiconductor Corporation
Units
V
V
V
dBm
°C
RMPA0965 Rev. C
1 page  
240
220
200
180
160
140
DEG (°C) 120
100
80
60
40
20
0
0
183°C
10 SEC
1°C/SEC
SOAK AT 150°C
FOR 60 SEC
45 SEC (MAX)
ABOVE 183°C
1°C/SEC
60 120 180
TIME (SEC)
Figure 1. Recommended Solder Reflow Profile
240
300
©2004 Fairchild Semiconductor Corporation
RMPA0965 Rev. C
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RMPA0965.PDF ] | |
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