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General Semiconductor - MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER

Numéro de référence RMB4S
Description MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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RMB4S fiche technique
PATENT PENDING
PATENT PENDING
PATENT PENDING
RMB2S THRU RMB4S
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT
FAST RECOVERY BRIDGE RECTIFIER
Reverse Voltage - 200 to 400 Volts Forward Current - 0.5 Ampere
0.029 (0.74)
0.017 (0.43)
Case Style MBS
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
4 (2.90) 0.106 (2.70)
4 (2.40) 0.090 (2.30)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0-8o
0.038 (0.96)
0.019 (0.48)
0.0075 (0.19)
0.0065 (0.16)
0.205 (5.21)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.117 (2.97)
0.107 (2.72)
0.058 (1.47)
0.054 (1.37)
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
This series is UL recognized under Component Index,
file number E54214
Glass passivated chip junctions
High surge overload rating: 35A peak
Saves space on printed circuit boards
Fast recovery, low loss switching
0.049 (1.24) High temperature soldering guaranteed:
0.039 (0.99)
0.062 (1.57) 260°C/10 seconds at 5 lbs. (2.3kg) tension
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Mounting Position: Any
Weight: 0.0078 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
RMB2S
RMB4S
Device marking code
R2 R4
Maximum repetitive peak reverse voltage
VRRM
200
400
Maximum RMS voltage
VRMS
140
280
Maximum DC blocking voltage
VDC 200
400
Maximum average forward output rectified
current at TA=30°C
- on glass-epoxy P.C.B. (NOTE 1)
- on aluminum substrate (NOTE 2)
I(AV)
0.5
0.8
Peak forward surge current 8.3msec single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
30.0
Rating for fusing (t<8.3ms)
I2t 5.0
Maximum instantaneous forward voltage drop
per leg at 0.4A
VF 1.25
Maximum DC reverse current at
rated DC blocking voltage per leg
TA=25°C
TA=125°C
IR
5.0
100
Maximum reverse recovery time (NOTE 3)
trr 150
Typical junction capacitance per leg (NOTE 4)
CJ 13.0
Typical thermal resistance per leg
(NOTE 1)
(NOTE 2)
(NOTE 1)
RΘJA
RΘJA
RΘJL
85.0
70.0
20.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
NOTES:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8 x 0.8" (2.0 x 2.0mm) mounted on 0.05 x 0.05” (1.3 x 1.3mm) solder pad
(3) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
UNITS
Volts
Volts
Volts
Amp
Amps
A2sec
Volts
ns
pF
°C/W
°C
9/8/98

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