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RLP1N06CLE fiches techniques PDF

Intersil Corporation - 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET

Numéro de référence RLP1N06CLE
Description 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RLP1N06CLE fiche technique
Data Sheet
RLP1N06CLE
July 1999 File Number 2839.4
1A, 55V, 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET
The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.
Formerly developmental type TA09880.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N06CLE
TO-220AB
L1N06CLE
NOTE: When ordering, use the entire part number.
Features
• 1A, 55V
• rDS(ON) = 0.750
• ILIMIT at 150oC = 1.1A to 1.5A Maximum
• Built-in Voltage Clamp
• Built-in Current Limiting
• ESD Protected, 2kV Minimum
• Controlled Switching Limits EMI and RFI
• 175oC Rated Junction Temperature
• Logic Level Gate
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
S
6-428
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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