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PDF TGF4350 Data sheet ( Hoja de datos )
| Número de pieza | TGF4350 | |
| Descripción | 300um Discrete pHEMT | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Advance Product Information
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• DC 22 GHz Frequency Range
• 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
• Floating Source Configuration
• Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
• Low Noise amplifiers
17
F = 10 GHz
Vd = 3 V
15 Iq = 15 mA
13
80
70
60
11 50
9 40
7 30
5
3
1
-12 -8
-4 0 4
Input Power - dBm
Pout (dBm)
Gain (dB)
PAE (%)
8
20
10
0
12
2.4 16
F = 10 GHz
2.2 15
2.0 14
1.8 13
1.6 12
1.4 11
1.2 10
1.0
0.8
0.6
0.4
5
9
8
7
6
10 15 20 25 30 35 40 45 50
Drain Current - mA
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
NF (dB) Vd = 8 V
Gain (dB) Vd = 3 V
Gain (dB) Vd = 5 V
Gain (dB) Vd = 8 V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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1 page  
Advance Product Information
TGF4350-EPU
Process and Assembly Notes
This device should be attached using conductive epoxy only.
Contact factory for additional details as required.
Component placement and adhesive attachment assembly notes:
•= vacuum pencils and/or vacuum collets preferred method of pick up
•= avoidance of air bridges during placement
•= force impact critical during auto placement
•= organic attachment can be used in low-power applications
•= curing should be done in a convection oven; proper exhaust is a safety concern
•= microwave or radiant curing should not be used because of differential heating
•= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•= thermosonic ball bonding is the preferred interconnect technique
•= force, time, and ultrasonics are critical parameters
•= aluminum wire should not be used
•= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TGF4350.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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