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Numéro de référence | TGF1350 | ||
Description | Discrete MESFET | ||
Fabricant | TriQuint Semiconductor | ||
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Discrete MESFET
Product Data Sheet
TGF1350-SCC
Key Features and Performance
• 0.5 um x 300 um FET
• 1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
• 2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
• All-gold Metallization for High Reliability
• Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Pages | Pages 5 | ||
Télécharger | [ TGF1350 ] |
No | Description détaillée | Fabricant |
TGF1350 | Discrete MESFET | TriQuint Semiconductor |
TGF1350-SCC | Discrete MESFET | TriQuint Semiconductor |
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