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PDF TGA8349-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA8349-SCC | |
| Descripción | Gain Block Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA8349-SCC
8349Gain Block Amplifier
q DC to 14 -GHz Frequency Range
q 1.2:1 Input SWR, 1.3:1 Output SWR
q 11-dB Small Signal Gain
q 16-dBm Output Power at 1 -dB Gain Compression at Midband
q 3.1-dB Noise Figure at Midband
q 3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed
for use as a multi -octave general-purpose gain block. Nine 122 -µm gate width FETs provide 11-dB
nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16 -dBm at
1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Gr ound is provided to
the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual -gate
AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system
applications including fiber optic.
The TGA8349-SCC is supplied in chip for m and is engineer ed for high -volume automated assembly.
All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic
wire-bonding processes.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
1 page  
TGA8349-SCC
RF CHARACTERISTICS
DC CHARACTERISTICS
THERMAL DATA
PARAMETER
G P Small–signal power gain
SWR(in) Input standing wave ratio
SWR(out) Output standing wave ratio
P 1dB Output power at 1–dB gain compression
NF Noise figure
Output third harmonic at Pin = -2 dBm
Output second harmonic at Pin = -2 dBm
TEST CONDITIONS
f = DC to 14 GHz
f = DC to 14 GHz
f = DC to 14 GHz
f = 7 GHz
f = 7 GHz
fo = 1 GHz
fo = 3 GHz
fo = 5 GHz
fo = 1 GHz
fo = 3 GHz
fo = 5 GHz
V + = 8 V, VCTRL = 1.5 V, I+ = 80 mA TA = 25°C (unless other wise noted)
* Unit dBc applies to decibels with r espect to the car rier or fundamental fr equency, f.o
TYP
11
1.2:1
1.3:1
16
3.1
-51
-47
-48
-26
-27
-28
UNIT
dB
-
-
dBm
dB
dBc*
dBc*
PARAMETER
I DSS Total zero–gate–voltage drain current at saturation
TEST CONDITIONS
VDS = 0.5 V to 3.5 V,
V GS = 0 V
MIN
131
MAX
395
UNIT
mA
TA = 25°C
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe.
PARAMETER
R jC Thermal resistance,
channel–to–backside
TEST CONDITIONS
FET
V+ = 8 V
V DS(FET) = 6.18 V, I D(FET) = 5 mA, channel = 79.6° C 311.4
Base = 70°C VDS(FET) = 5.08 V, I D(FET) = 8 mA, channel = 82.8° C 314.0
VDS(FET)= 4.36 V, I D(FET) =10 mA, channel = 83.8° C 315.7
MMIC UNIT
34.6
35.0 °C/W
35.2
PARAMETER
R (RES) Thermal resistance of drain
termination resistor, 37.7
TEST CONDITIONS
VRES =1.70 V, I D(MMIC) =45 mA, Base =70° C,R jC = 89.5°C/W
VRES =2.71 V, I D(MMIC) =72 mA, Base =70° C,R jC = 89.7°C/W
VRES =3.39 V, I D(MMIC) =90 mA, Base =70° C,R jC = 90.2°C/W
R (RES) UNIT
76.8 °C/W
87.5
97.5
MMIC mounted with 38 m AuSn solder to car rier.
ID (MMIC) = 9 x ID (FET).
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGA8349-SCC.PDF ] | |
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