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PDF TGA8300 Data sheet ( Hoja de datos )
| Número de pieza | TGA8300 | |
| Descripción | Gain Block Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA8300- SCC
8300Gain Block Amplifier
q 2 to 18- GHz Fr equency Range
q 20- dBm Typical Output Power at 1-dB Gain Compression
q 7.5- dB Typical Gain
q Input/Output SWR 1.5:1
q On - Chip Blocking Capacitor Allows Easy Cascading
q 2,362 x 1,625 x 0,152 mm (0.093 x 0.064 x 0.006 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a
multioctave general - purpose gain block. Four 189 - µm gate width FETs provide 7.5 d- B nominal gain
and 5.5 - dB noise figur e from 2 to 18- GHz. Typical power output is 20 - dBm at 1- dB gain compression.
Typical input and output SWRs ar e 1.5:1. Ground is provided to the circuitry through vias to the
backside metallization.
The TGA8300 - SCC is supplied in chip for m and is engineered for high - volume automated assembly .
All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic
wire- bonding processes.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
1 page  
TGA8300 - SCC
RF CHARACTERISTICS
GP
SWR(in)
SWR(out)
P 1dB
NF
PARAMETER
Small–signal power gain
Input standing wave ratio
Output standing wave ratio
Output power at 1–dB gain compression
Noise figure
IP 3 Output third–order intercept point
TEST CONDITIONS
f = 2 to 18 GHz
f = 2 to 18 GHz
f = 2 to 18 GHz
f= 2 to 18 GHz
f = 2 to 18 GHz
f = 8 GHz
f= 12 GHz
f =18 GHz
V+ = 6 V, I+ = 50% IDSS, TA = 25°C
TYP UNIT
7.5 dB
1.5:1 -
1.4:1 -
20 dBm
5.5 dB
32
28 dBm
27
DC CHARACTERISTICS
PARAMETER
I DSS Total zero–gate–voltage drain current
at saturation
TEST CONDITIONS
VDS = 0.5 V to 3.5 V, V GS = 0
MIN MAX UNIT
130 300 mA
TA = 25°C
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
THERMAL INFORMATION
PARAMETER
R JC Thermal resistance, channel–to–backside
TEST CONDITIONS
V + = 6 V, I+ = 50% I DSS
NOM
45
UNIT
°C/W
EQUIVALENT
SCHEMATIC
V+
RF
Input
FET 1
189 m
FET 2
189 m
FET 3
189 m
FET 4
189 m
RF
Output
V-
RECOMMENDED TEST
CONFIGURA TION
RF Input
DC Block
DUT RF Output
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGA8300.PDF ] | |
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