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PDF TGA8286-EPU Data sheet ( Hoja de datos )
| Número de pieza | TGA8286-EPU | |
| Descripción | 8 - 10.5 GHz Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Product Data Sheet
8 - 10.5 GHz Power Amplifier
TGA8286-EPU
Key Features and Performance
• 8 to 10.5 GHz Frequency Range,
X-band
• Two Stage 5-W HFET Power Amplifier
• 37% P.A.E. at 2 to 3 dB Gain
Compression
• 17 dB Small Signal Gain
• Bias can be applied from either the
upper or lower edges
• 5.384 x 2.997 x 0.1016 mm (0.212 x
0.118 x 0.004 in.)
Description
The TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an
X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain
from 8 to 10.5 GHz with a typical 37% power-added efficiency at 2 to 3 dB gain
compression. Ground is provided to the circuitry through vias to the backside
metallization. The TGA8286-EPU effectively addresses applications such as an X-
band radar transmitter or a microwave communication transmitter.
The TGA8286-EPU is supplied in chip form and is engineered for high volume
automated assembly. All metal surfaces are gold plated to be compatiable with
thermocompression and thermosonic wire bonding processes.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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1 page  
Product Data Sheet
TGA8286-EPU
RF CHARACTERISTICS
P ARAMETER
GP Small–s ignal pow e r ga in
SWR(in) Input s tanding w a ve ratio
SWR(out) Output s tanding w a ve ratio
P3dB Output pow er at 3–dB ga in c ompres s ion
Output s e cond ha rmonic a t 3–dB gain compre s s ion
IP 3
P.A.E.
Output third–order inte rc ept point, 30MHz s ignal s pa cing
Pow e r adde d effic iency
TES T C ONDITIONS TYP UNIT
f = 8 to 10.5 GHz 16 dB
f = 8 to 10.5 GHz 1.4:1 -
f = 8 to 10.5 GHz 1.9:1 -
f = 8 to 10.5 GHz 36 dBm
f = 9 GHz
–59 dBc
f = 9 GHz
46
f = 10 GHz
45 dBm
f = 11 GHz
44
f = 8 to 10.5 GHz 35 %
V D = 10 V, I D = 1.3 A, T A = 25oC (unless otherwise noted)
THERMAL DATA
P ARAMETER
RθjC The rma l re s is ta nc e ,
c ha nne l–to–ba c ks ide
TES T C ONDITIONS
VDS (FET) = 10 V, Ba s e = 25°C, Cha nne l = 76°C
ID(FET) = 1.15 mA Ba s e = 100°C, Cha nne l = 161°C
DGF ET M M IC UNIT
4.4 3.5 °C/W
5.3 4.2
MMIC mounted with 38um AuSn solder to carrier.
EQUIVALENT
SCHEMATIC
FET 1 = 2.4mm HFET, 2 x 1200um HFETs
FET 2 = 9.6mm HFET, 8 x 1200um HFETs
TaN resistors R 1 to R 24 values are in ohms and have a tolerance of +/- 16%,
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGA8286-EPU.PDF ] | |
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