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PDF TGA1071-EPU Data sheet ( Hoja de datos )
| Número de pieza | TGA1071-EPU | |
| Descripción | 36 - 40 GHz Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Advance Product Information
36 - 40 GHz Power Amplifier TGA1071-EPU
The TriQuint TGA1071-EPU is a two stage
PA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio and point-to-multipoint
systems.
The two-stage design consists of two 300 um input
devices driving a pair of 400 um output devices.
The TGA1071 provides 22dBm of output power
across 36-40 GHz with a typical small signal gain
of 15dB.
The TGA1071 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
Key Features and Performance
• 0.25um pHEMT Technology
• 36-40 GHz Frequency Range
• 22 dBm Nominal Pout @ P1dB
• 15 dB Nominal Gain
• 5V, 120 mA Bias
• Chip Dimensions 3.4mm x 2.1mm
Primary Applications
• Point-to-Point Radio
• Point-Multipoint Radio
TGA1071 Typical RF Performance (Fixtured)
20
15
10
5
0
-5 s11
-10
-15
-20 s22
-25
32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0
Frequency (GHz)
Small Signal Gain
25.00
TGA1071 RF Probe Summary Data
20.00
15.00
10.00
5.00
0.00
36
37 38 39
Frequency (GHz)
40
Pout at 1dB Gain Compression
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
Reflow process assembly notes:
Chip Assembly and Bonding Diagram
• AuSn (80/20) solder with limited exposure to temperatures at or above 300§C
• alloy station or conveyor furnace with reducing atmosphere
• no fluxes should be utilized
• coefficient of thermal expansion matching is critical for long-term reliability
• storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
• vacuum pencils and/or vacuum collets preferred method of pick up
• avoidance of air bridges during placement
• force impact critical during auto placement
• organic attachment can be used in low-power applications
• curing should be done in a convection oven; proper exhaust is a safety concern
• microwave or radiant curing should not be used because of differential heating
• coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
• thermosonic ball bonding is the preferred interconnect technique
• force, time, and ultrasonics are critical parameters
• aluminum wire should not be used
• discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
• maximum stage temperature: 200§C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
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