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PDF TFBS4711-TR3 Data sheet ( Hoja de datos )
| Número de pieza | TFBS4711-TR3 | |
| Descripción | Serial Infrared Transceiver SIR/ 115.2 kbit/s/ 2.7 V to 5.5 V Operation | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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VISHAY
TFBS4711
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4711 is a low profile, Infrared Data Trans-
ceiver module. It supports IrDA data rates up to
115.2 kbit/s (SIR). The transceiver module consists of
a PIN photodiode, an infrared emitter (IRED), and a
low-power CMOS control IC to provide a total front-
end solution in a single package.
The device is designed for the low power IrDA stan-
dard with an extended range on-axis up to 1 m. The
Rxd pulse width is independent of the duration of Txd
pulse and always stays at a fixed width thus making
18508
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
Features
• Compliant with the latest IrDA physical layer
low power specification
( 9.6 kbit/s to 115.2 kbit/s)
• Small package:
H 1.9 mm x D 3.1 mm x L 6.0 mm
• Industries smallest footprint
- 6.0 mm length
- 1.9 mm height
• Typical Link distance on-axis up to 1 m
• Battery & Power Management Features:
> Idle Current - 75 µA Typical
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.5 V within specification
over full temperature range from - 25 °C to + 85 °C
• Remote Control - transmit distance up to 8 meters
• Tri-State Receiver Output, floating in shutdown
with a weak pull-up
• Constant Rxd output pulse width (2 µs typical)
• Meets IrFM Fast Connection requirements
• Split power supply, an independent, unregulated
supply for IRED Anode and a well regulated
supply for VCC
• Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232.
Applications
• Ideal for Battery Operated Devices
• PDAs
• Mobile Phones
• Electronic Wallet (IrFM)
• Notebook Computers
• Digital Still and Video Cameras
• Printers, Fax Machines, Photocopiers,
Screen Projectors
• Data Loggers
• External Infrared Adapters (Dongles)
• Diagnostics Systems
• Medical and Industrial Data Collection Devices
• Kiosks, POS, Point and Pay Devices
• GPS
• Access Control
• Field Programming Devices
Parts Table
Part
TFBS4711-TR1
TFBS4711-TR3
Description
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for side view surface mounting
Qty / Reel
1000 pcs
2500 pcs
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
1
1 page  
VISHAY
TFBS4711
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted
Parameter
Test Conditions
Minimum detection threshold
irradiance
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0 °, 15 °
Maximum detection threshold λ = 850 nm - 900 nm
irradiance
Maximum no detection
threshold irradiance
Rise time of output signal
Fall time of output signal
Rxd pulse width
Leading edge jitter
Standby /Shutdown delay,
receiver startup time
Latency
10 % to 90 %, CL = 15 pF
90 % to 10 %, CL = 15 pF
Input pulse width > 1.2 µs
Input Irradiance = 100 mW/m2,
≤ 115.2 kbit/s
After shutdown active
or power-on
Symbol
Ee
Ee
Ee
tr(Rxd)
tf(Rxd)
tPW
tL
Transmitter
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
IRED operating current
Tamb = - 25 °C to + 85 °C
Transceiver operating peak
supply current
During pulsed IRED operation
@ ID = 300 mA
IRED leakage current
Txd = 0 V, 0 < VCC < 5.5 V
Output radiant intensity
α = 0 °, Txd = High, SD = Low,
R = 0 Ω, VLED = 2.4 V
α = 0 °, 15 °, Txd = High, SD =
Low, R = 0 Ω, VLED = 2.4 V
VCC = 5.0 V, α = 0 °, 15 °, Txd =
High or SD = High (Receiver is
inactive as long as SD = High)
Output radiant intensity, angle of
half intensity
Peak-emission wavelength
Spectral bandwidth
Optical rise time
Optical fall time
Optical output pulse duration
Optical overshoot
Input pulse width 1.63 µs,
115.2 kbit/s
Input pulse width tTxd < 20 µs
Input pulse width tTxd ≥ 20 µs
Symbol
ID
ICC
IIRED
Ie
Ie
Ie
α
λp
∆λ
tropt
tfopt
topt
topt
topt
Min
4
(0.4)
10
10
1.7
Typ.
35
(3.5)
5
(500)
2.0
Max
80
(8)
100
100
3.0
250
Unit
mW/m2
(µW/cm2)
kW/m2
(mW/cm2)
mW/m2
(µW/cm2)
ns
ns
µs
ns
150 µs
150 µs
Min Typ. Max Unit
200 300 400 mA
0.57 mA
-1
tbd 60
1 µA
mW/sr
tbd 35
mW/sr
0.04 mW/sr
880
10
10
1.41
tTxd
± 22
45
1.63
900
100
100
2.23
tTxd + 0.15
300
25
°
nm
nm
ns
ns
µs
µs
µs
%
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
5
5 Page 
VISHAY
TFBS4711
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TFBS4711-TR3.PDF ] | |
Hoja de datos destacado
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