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PDF TEA1068 Data sheet ( Hoja de datos )
| Número de pieza | TEA1068 | |
| Descripción | Versatile telephone transmission circuit with dialler interface | |
| Fabricantes | NXP Semiconductors | |
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INTEGRATED CIRCUITS
DATA SHEET
TEA1068
Versatile telephone transmission
circuit with dialler interface
Product specification
Supersedes data of June 1990
File under Integrated Circuits, IC03
1996 Apr 23
1 page  
Philips Semiconductors
Versatile telephone transmission circuit
with dialler interface
Product specification
TEA1068
FUNCTIONAL DESCRIPTION
Supplies: VCC, LN, SLPE, REG and STAB
Power for the TEA1068 and its peripheral circuits is usually
obtained from the telephone line. The TEA1068 develops
its own supply at VCC and regulates its voltage drop. The
supply voltage VCCmay also be used to supply external
circuits, e.g. dialling and control circuits.
Decoupling of the supply voltage is performed by a
capacitor between VCC and VEE; the internal voltage
regulator is decoupled by a capacitor between REG and
VEE.
The DC current flowing into the set is determined by the
exchange voltage (Vexch), the feeding bridge resistance,
(Rexch) and the DC resistance of the telephone line (Rline).
An internal current stabilizer is set by a resistor of 3.6 kΩ
between the current stabilizer pin STAB and VEE
(see Fig.9).
If the line current Iline exceeds the current ICC+ 0.5 mA
required by the circuit itself (approximately 1 mA) plus the
current Ip required by the peripheral circuits connected to
VCC, then the voltage regulator diverts the excess current
via LN.
The regulated voltage on the line terminal (VLN) can be
calculated as:
VLN = Vref + I SLPE× R9
or
VLN= Vref + [(Iline− ICC − 0.5 × 103) − Ip] × R9
where Vref is an internally generated temperature
compensated reference voltage of 4.2 V and R9 is an
external resistor connected between SLPE and VEE.
The preferred value for R9 is 20 Ω. Changing the value of
R9 will also affect microphone gain, DTMF gain, gain
control characteristics, side-tone level, the maximum
output swing on LN and the DC characteristics (especially
at lower voltages).
Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip,
the static behaviour of the circuit is that of a 4.2 V regulator
diode with an internal resistance equal to that of R9. In the
audio frequency range, the dynamic impedance is largely
determined by R1 (see Fig.4).
The internal reference voltage can be adjusted by means
of an external resistor (RVA). This resistor, connected
between LN and REG, will decrease the internal reference
voltage; when connected between REG and SLPE, it will
increase the internal reference voltage. Current (Ip)
available from VCC for supplying peripheral circuits
depends on external components and on the line current.
Figure 10 shows this current for VCC > 2.2 V and for
VCC> 3 V, this being the minimum supply voltage for most
CMOS circuits, including voltage drop for an enable diode.
If MUTE is LOW, the available current is further reduced
when the receiving amplifier is driven.
handbook, halfpagLeN
VEE
Leq Rp
R1
Vref REG VCC
R9 C3 C1
20 Ω
4.7 µF
100 µF
MBA454
Rp = 17.5 kΩ
Leq = C3 × R9 × Rp
Fig.4 Equivalent impedance circuit.
Microphone inputs MIC+ and MIC− and gain
adjustment pins GAS1 and GAS2
The TEA1068 has symmetrical microphone inputs.
Its input impedance is 64 kΩ (2 × 32 kΩ) and its voltage
gain is typically 52 dB (when R7 = 68 kΩ; see Fig.14).
Dynamic, magnetic, piezoelectric or electret (with built-in
FET source followers) microphones can be used.
The arrangements with the microphone types mentioned
are shown in Fig.11.
The gain of the microphone amplifier can be adjusted
between 44 dB and 60 dB. The gain is proportional to the
value of the external resistor R7 connected between GAS1
and GAS2. An external capacitor C6 of 100 pF between
GAS1 and SLPE is required to ensure stability. A larger
value may be chosen to obtain a first-order low-pass filter.
The cut-off frequency corresponds with the time constant
R7 × C6.
1996 Apr 23
5
5 Page 
Philips Semiconductors
Versatile telephone transmission circuit
with dialler interface
Product specification
TEA1068
SYMBOL
PARAMETER
CONDITIONS
Transmitting amplifier output LN
VLN(rms) output voltage (RMS value)
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA
THD = 2%
THD = 10%
Iline = 15 mA; R7 = 68 kΩ;
200 Ω between MIC− and
MIC+; psophometrically
weighted (P53 curve)
Receiving amplifier input IR
Zi input impedance
Receiving amplifier outputs QR+ and QR−
Zo
Gv
output impedance
voltage gain from IR to QR+ or
QR−
single ended
Iline = 15 mA
RL (from QR+ or
QR−) = 300 Ω; single-ended
RL (from QR+ or
QR−) = 600 Ω; differential
∆Gvf
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
with respect to 800 Hz
∆GvT
gain variation with temperature at
Tamb = −25 °C and +75 °C
Iline = 50 mA;
with respect to 25 °C;
without R6
Vo(rms)
Vno(rms)
output voltage (RMS value)
noise output voltage (RMS value)
sine wave drive; Iline = 15 mA;
Ip = 0 mA; THD = 2%;
R4 = 100 kΩ
single-ended; RL = 150 Ω
single-ended; RL = 450 Ω
differential; f = 3400 Hz;
Rseries = 100 Ω; CL = 47 nF
Iline = 15 mA; R4 = 100 kΩ;
IR open-circuit
psophometrically weighted
(P53 curve)
single-ended; RL = 300 Ω
differential; RL = 600 Ω
Gain adjustment GAR
∆Gv gain variation of receiving amplifier
achievable by varying R4 between
GAR and QR
MIN.
1.9
−
−
17
−
24
30
−0.5
−
0.3
0.4
0.8
−
−
−8
TYP. MAX. UNIT
2.3 −
2.6 −
−72 −
V
V
dBmp
21 25 kΩ
4−
25 26
31 32
−0.2 0
±0.2 −
Ω
dB
dB
dB
dB
0.38 −
0.52 −
1.0 −
V
V
V
50 −
100 −
µV
µV
− +8 dB
1996 Apr 23
11
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet TEA1068.PDF ] | |
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