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PDF TDA9852 Data sheet ( Hoja de datos )
| Número de pieza | TDA9852 | |
| Descripción | I2C-bus controlled BTSC stereo/SAP decoder and audio processor | |
| Fabricantes | NXP Semiconductors | |
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INTEGRATED CIRCUITS
DATA SHEET
TDA9852
I2C-bus controlled BTSC
stereo/SAP decoder and audio
processor
Preliminary specification
Supersedes data of 1996 Feb 28
File under Integrated Circuits, IC02
1997 Mar 11
1 page  
Philips Semiconductors
I2C-bus controlled BTSC stereo/SAP
decoder and audio processor
Preliminary specification
TDA9852
Component list
Electrolytic capacitors ±20%; foil or ceramic capacitors ±10%; resistors ±5%; unless otherwise specified; see Fig.1.
COMPONENTS
VALUE
TYPE
REMARK
C1
10 µF
electrolytic
63 V
C2 470 nF foil
C3
4.7 µF
electrolytic
63 V
C4 220 nF foil
C5
10 µF
electrolytic
63 V; Ileak < 1.5 µA
C6
2.2 µF
electrolytic
16 V
C7
2.2 µF
electrolytic
63 V
C8 15 nF foil
±5%
C9 15 nF foil
±5%
C10
2.2 µF
electrolytic
16 V
C11
8.2 nF
foil or ceramic
±5% SMD 2220/1206
C12 150 nF
foil
±5%
C14 150 nF
foil
±5%
C15
100 µF
electrolytic
16 V
C16
4.7 µF
electrolytic
63 V
C17
4.7 µF
electrolytic
63 V
C18 100 nF
foil
C19
10 µF
electrolytic
63 V
C20
4.7 µF
electrolytic
63 V
C21 47 nF
foil
±5%
C22
1 µF
electrolytic
63 V
C23
1 µF
electrolytic
63 V
C24
10 µF
electrolytic
63 V ±10%
C25
10 µF
electrolytic
63 V ±10%
C26
2.2 µF
electrolytic
16 V
C27
2.2 µF
electrolytic
63 V
C28
4.7 µF
electrolytic
63 V ±10%
C29
2.2 µF
electrolytic
16 V
C30
8.2 nF
foil or ceramic
±5% SMD 2220/1206
C34
100 µF
electrolytic
16 V
C47
220 µF
electrolytic
25 V
C49
100 nF
foil or ceramic
SMD 1206
R1 2.2 kΩ
−
R2 20 kΩ
−
R3 2.2 kΩ
−
R4 20 kΩ
−
R5 2.2 kΩ
−
R6 8.2 kΩ
−
±2%
1997 Mar 11
5
5 Page 
Philips Semiconductors
I2C-bus controlled BTSC stereo/SAP
decoder and audio processor
Preliminary specification
TDA9852
Requirements for the composite input signal to ensure correct system performance
SYMBOL
PARAMETER
COMPL+R(rms)
composite input level for 100%
modulation L + R; 25 kHz
deviation; fi = 300 Hz;
RMS value
∆COMP
composite input level
spreading under operating
conditions
Zo
flf
fhf
THDL,R
output impedance
low frequency roll-off
high frequency roll-off
total harmonic distortion L + R
S/N signal-to-noise ratio
L + R/noise
αSB side band suppression mono
into unmodulated SAP carrier;
SAP carrier/side band
αSP spectral spurious attenuation
L + R/spurious
CONDITIONS
measured at COMP
MIN.
162
Tamb = −20 to +70 °C; aging; −0.5
power supply influence
note 1
−
25 kHz deviation L + R; −2 dB −
25 kHz deviation L + R; −2 dB 100
fi = 1 kHz; 25 kHz deviation
fi = 1 kHz; 125 kHz deviation;
note 2
−
−
CCIR 468-2 weighted quasi
peak; L + R; 25 kHz deviation;
fi = 1 kHz; 75 µs de-emphasis
critical picture modulation; 44
note 3
with sync only
54
mono signal: 25 kHz deviation, 46
fi = 1 kHz; side band: SAP
carrier frequency ±1 kHz
50 Hz to 100 kHz;
mainly n × fH; no de-emphasis;
L + R; 25 kHz deviation,
f = 1 kHz as reference
n = 1, 5
35
n = 4, 6
40
n = 2, 3
26
TYP.
250
MAX.
363
− +0.5
low-ohmic 5
−5
−−
− 0.5
− 1.5
−−
−−
−−
−−
−−
−−
UNIT
mV
dB
kΩ
Hz
kHz
%
%
dB
dB
dB
dB
dB
dB
Notes
1. Low-ohmic preferred, otherwise the signal loss and spreading at COMP, caused by Zo and the composite input
impedance (see Chapter “Characteristics”, Section “Input level adjustment control”) must be taken into account.
2. In order to prevent clipping at over-modulation
(maximum deviation in the BTSC system for 100% modulation is 73 kHz).
3. For example colour bar or flat field white; 100% video modulation.
1997 Mar 11
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet TDA9852.PDF ] | |
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