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PDF TISP83121DR Data sheet ( Hoja de datos )
| Número de pieza | TISP83121DR | |
| Descripción | DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
Copyright © 1999, Power Innovations Limited, UK
FEBRUARY 1999
OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS
q Programmable Protection Configurations up
to ±100 V
D PACKAGE
(TOP VIEW)
q Typically 5 Lines Protected by Two
TISP83121D + Diode Steering Networks
q High Surge Current
- 150 A 10/1000 µs
- 150 A 10/700 µs
- 500 A 8/20 µs
q Pin compatible with the LCP3121
- Functional Replacement in Diode Steering
Network Applications
- 50% more surge current
K1
8K
G1 2
7A
G2 3
6A
K4
5K
MD6XAYA
For operation at the rated current values connect
pins 1, 4, 5 and 8 together.
device symbol
A
q Small Outline Surface Mount Package
- Available Ordering Options
G2
CARRIER
Tube
Taped and reeled
PART #
TISP83121D
TISP83121DR
description
The TISP83121D is a dual-gate reverse-blocking
unidirectional thyristor designed for the
protection of dual-voltage ringing SLICs
(Subscriber Line Interface Circuits) against
overvoltages on the telephone line caused by
lightning, a.c. power contact and induction.
The device chip is a four-layer NPNP silicon
thyristor structure which has an electrode
connection to every layer. For negative
overvoltage protection the TISP83121D is used
in a common anode configuration with the
voltage to be limited applied to the cathode (K)
terminal and the negative reference potential
applied to the gate 1 (G1) terminal. For positive
overvoltage protection the TISP83121D is used
in a common cathode configuration with the
voltage to be limited applied to the anode (A)
terminal and the positive reference potential
applied to the gate 2 (G2) terminal.
The TISP83121D is a unidirectional protector
and to prevent reverse bias, requires the use of a
series diode between the protected line
conductor and the protector. Further, the gate
reference supply voltage requires an
appropriately poled series diode to prevent the
G1
K SD6XAKA
supply from being shorted when the
TISP83121D crowbars.
Under low level power cross conditions the
TISP83121D gate current will charge the gate
reference supply. If the reference supply cannot
absorb the charging current its potential will
increase, possibly to damaging levels. To avoid
excessive voltage levels a clamp (zener or
avalanche breakdown diode) may be added in
shunt with the supply. Alternatively, a grounded
collector emitter-follower may be used to reduce
the charging current by the transistors HFE value.
This monolithic protection device is made with a
ion-implanted epitaxial-planar technology to give
a consistent protection performance and be
virtually transparent to the system in normal
operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
voltage would be 140((25+25)/10+15) = 2800 V. Another limitation is long term power cross. The long term
power cross capability of the TISP83121D is 3 A peak or 2.1 A rms. If the line conductor overcurrent
protection was given by a PTC resistor which switched at 0.2 A, the maximum number of conductors
becomes 2.1/0.2 = 10 or 5 lines.
battery supply impedance
In many designs, the battery supply voltages are generated by switching mode power supplies. This type of
power supply cannot be charged like a battery. Feeding a charging current to a switching mode power supply
will usually cause the supply to stop switching and the voltage to rise. The gate current of the TISP83121D is
a charging current for the supply. To avoid the supply voltage from rising and damaging the connected SLICs,
an avalanche diode voltage clamp can be connected across the supply (Figure 3. (A)).
Another approach is to reduce the gate charging current for the supply by a transistor buffer (Figure 3. (B)). If
the transistor gain was 50, a 200 mA gate current would be reduced to a supply charging current of
200/50 = 4 mA In both cases, the dissipation in the control devices can be substantial and power capability
needs to be taken into account in device selection.
PRODUCT INFORMATION
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TISP83121DR.PDF ] | |
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