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Power Innovations Limited - DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

Numéro de référence TISP3082F3
Description DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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TISP3082F3 fiche technique
Copyright © 1997, Power Innovations Limited, UK
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3072F3
‘3082F3
VDRM
V
58
66
V(BO)
V
72
82
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
80
70
60
45
38
50
50
50
35
q Surface Mount and Through-Hole Options
D PACKAGE
(TOP VIEW)
T1
NC 2
NC 3
R4
8G
7G
6G
5 G MDXXAE
NC - No internal connection
P PACKAGE
(TOP VIEW)
T1
8T
G2
7G
G3
R4
6G
5R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T1
G2
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
R3
device symbol
T
MDXXAG MD23AA
R
q UL Recognized, E132482
description
These low voltage dual symmetrical transient
voltage suppressor devices are designed to
protect ISDN applications against transients
caused by lightning strikes and a.c. power lines.
Offered in two voltage variants to meet battery
and protection requirements they are guaranteed
to suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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