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PDF TISP2082F3 Data sheet ( Hoja de datos )
| Número de pieza | TISP2082F3 | |
| Descripción | DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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Copyright © 1997, Power Innovations Limited, UK
TISP2072F3, TISP2082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘2072F3
‘2082F3
VDRM
V
58
66
V(BO)
V
72
82
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
80
70
60
45
38
50
50
50
35
q Surface Mount and Through-Hole Options
D PACKAGE
(TOP VIEW)
T1
NC 2
NC 3
R4
8G
7G
6G
5 G MDXXAE
NC - No internal connection
P PACKAGE
(TOP VIEW)
T1
8T
G2
7G
G3
R4
6G
5R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T1
G2
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
R3
device symbol
T
MDXXAG MD23AA
R
q UL Recognized, E132482
description
These low voltage dual symmetrical transient
voltage suppressor devices are designed to
protect ISDN applications against transients
caused by lightning strikes and a.c. power lines.
Offered in two voltage variants to meet battery
and protection requirements they are guaranteed
to suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
SD2XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TISP2072F3, TISP2082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC2LAP
Normalised to V(BR)
1.2 I(BR) = 100 µA and 25°C
Negative Polarity
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
TC2MAQ
1.1
V(BR)M
1.0
V(BR)
V(BO)
0.9
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 4.
150
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
TC2LAM
1.0
0.9
0.8
0.7
0.6
0.5 I(BO)
0.4
0.3
IH
0.2
0.1
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 6.
150
10
150°C
25°C
-40°C
1
1 2 3 4 5 6 7 8 9 10
VT - On-State Voltage - V
Figure 5.
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TC2LAF
1.3
1.2
1.1
Positive
Negative
1.0
0·001
0·01
0·1
1
10 100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 7.
PRODUCT INFORMATION
5
5 Page 
TISP2072F3, TISP2082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
APPLICATIONS INFORMATION
protection voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This
increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate
V(BO) (250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output
resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance
becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, TJ , and the bias voltage, comprising
of the dc voltage, VD , and the ac voltage, Vd . All the capacitance values in this data sheet are measured
with an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure
21. When VD >> Vd the capacitance value is independent on the value of Vd . The capacitance is essentially
constant over the range of normal telecommunication frequencies.
NORMALISED CAPACITANCE
vs
RMS AC TEST VOLTAGE
AIXXAA
1.05
1.00
0.95
0.90
0.85
0.80
0.75
Normalised to Vd = 100 mV
DC Bias, VD = 0
0.70
1
10 100
Vd - RMS AC Test Voltage - mV
Figure 21.
1000
PRODUCT INFORMATION
11
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