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Power Innovations Limited - PNP SILICON POWER TRANSISTORS

Numéro de référence TIPP32C
Description PNP SILICON POWER TRANSISTORS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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TIPP32C fiche technique
Copyright © 1997, Power Innovations Limited, UK
q 20 W Pulsed Power Dissipation
q 100 V Capability
q 2 A Continuous Collector Current
q 4 A Peak Collector Current
q Customer-Specified Selections Available
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
LP PACKAGE
(TOP VIEW)
E
1
C2
3
B
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle 2%.
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
PT
Tj
Tstg
TL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-2
-4
-1
0.8
20
-55 to +150
-55 to +150
260
UNIT
V
V
V
A
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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